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| MP4013 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4013 High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Industrial Applications Unit: mm * * * * * Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation) : PT = 4 W (Ta = 25C) High collector current: IC (DC) = 2 A (max) High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Zener diode included between collector and base. Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Continuous base current Collector power dissipation (1 device operation) Collector power dissipation (4 devices operation) Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Rating 80 10 80 10 8 2 3 0.5 2.0 Unit V V V A A W JEDEC JEITA TOSHIBA 2-25A1A Weight: 2.1 g (typ.) PT Tj Tstg 4.0 150 -55 to 150 W C C Array Configuration 3 5 7 9 2 1 R1 R2 4 6 8 10 R1 5 k R2 300 1 2002-11-20 MP4013 Thermal Characteristics Characteristics Thermal resistance of junction to ambient (4 devices operation, Ta = 25C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) TL 260 C Symbol Max Unit Rth (j-a) 31.3 C/W Electrical Characteristics (Ta = 25C) Characteristics Collector cut-off current Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Saturation voltage Collector-emitter Base-emitter Symbol ICBO ICEO IEBO V (BR) CBO V (BR) CEO hFE (1) VCE (sat) VBE (sat) fT Cob ton Input Switching time Storage time tstg IB1 20 s Test Condition VCB = 60 V, IE = 0 A VCE = 60 V, IB = 0 A VEB = 8 V, IC = 0 A IC = 100 A, IE = 0 A IC = 10 mA, IB = 0 A VCE = 2 V, IC = 1 A IC = 1 A, IB = 1 mA IC = 1 A, IB = 1 mA VCE = 2 V, IC = 0.5 A VCB = 10 V, IE = 0 A, f = 1MHz Output 30 Min 0.8 70 70 2000 Typ. 80 80 100 20 0.4 Max 10 10 4.0 90 90 1.5 2.0 Unit A A mA V V V MHz pF Transition frequency Collector output capacitance Turn-on time IB1 IB2 4.0 s Fall time tf IB1 = -IB2 = 1 mA, duty cycle 1% IB2 VCC = 30 V 0.6 2 2002-11-20 MP4013 IC - VCE 3.2 Common emitter 3 1 0.5 0.3 Ta = 25C IC - VBE Common emitter VCE = 2 V (A) 2.4 (A) Collector current IC 2.4 Collector current IC 1.6 0.22 1.6 0.20 0.8 IB = 0.18 mA 0 0 0.8 Ta = 100C 25 -55 2 4 6 8 0 0 0.8 1.6 2.4 3.2 Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) hFE - IC 10000 5000 2.4 VCE - IB Common emitter 2.0 Ta = 25C hFE 25 -55 Collector-emitter voltage VCE (V) 3000 Ta = 100C DC current gain 1.6 2.0 1.2 1.0 0.5 0.8 0.1 1.5 2.5 IC = 3.0 A 1000 300 Common emitter VCE = 2 V 100 0.03 0.05 0.1 0.3 0.5 1 3 5 10 0.4 Collector current IC (A) 0 0.1 0.3 1 3 10 30 100 300 Base current IB (mA) VCE (sat) - IC 10 10 IC/IB = 500 VBE (sat) - IC Base-emitter saturation voltage VBE (sat) (V) Common emitter Common emitter 5 3 Ta = -55C 25 1 100 IC/IB = 500 Collector-emitter saturation voltage VCE (sat) (V) 5 3 Ta = -55C 1 25 0.5 0.3 0.1 100 0.5 0.3 0.1 0.3 0.5 1 3 5 10 0.3 0.5 1 3 5 10 Collector current IC (A) Collector current IC (A) 3 2002-11-20 MP4013 rth - tw 300 Curves should be applied in thermal (4) Transient thermal resistance rth (C/W) 100 limited area (single nonrepetitive pulse) below figure show thermal resistance per 1 unit versus pulse width. 30 (3) (2) (1) -No heat sink and attached on a circuit board(1) 1 device operation (2) 2 devices operation (3) 3 devices operation Circuit board (4) 4 devices operation 0.01 0.1 1 10 100 1000 10 3 1 0.001 Pulse width tw (s) Safe Operating Area 20 10 5 8 PT - Ta (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation Attached on a circuit board (W) Total power dissipation (A) 3 IC max (pulsed)* PT 6 IC 100 s* 1 10 ms* 1 ms* 4 (4) (3) (2) Circuit board Collector current 0.5 0.3 2 (1) 0 0 0.1 0.05 *: Single nonrepetitive pulse Ta = 25C VCEO max 30 50 100 40 80 120 160 200 Ambient temperature Ta (C) Curves must be derated linearly with increase in temperature. 0.03 0.5 1 3 5 10 Collector-emitter voltage VCE (V) Tj - PT 160 (C) Junction temperature increase Tj (1) 120 (2) (3) (4) 80 Circuit board Attached on a circuit board 40 (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation 1 2 3 4 5 0 0 Total power dissipation PT (W) 4 2002-11-20 MP4013 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 5 2002-11-20 |
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